dc C 8 ghz terminated spdt switch technical data HMMC-2007 features ? outputs terminated in 50 w when off ? frequency range: dc-8 ghz ? insertion loss: 1.2 db @ 8 ghz ? isolation: >70 db @ 45 mhz >35 db @ 8 ghz ? return loss: 25 db (both input and selected output) 18 db unselected output ? switching speed: <20 m s (10%-90% rf) ?p -1db : 27 dbm ? harmonics (dc coupled): <-80 dbc @ 10 dbm description the HMMC-2007 is a gaas mono- lithic microwave integrated circuit (mmic) designed for low insertion loss and high isolation from dc to 8 ghz. it is intended for use as a general-purpose, single-pole, double-throw (spdt), absorptive switch. two series and two shunt mesfets per throw provide 1.4 db maximum insertion loss and 38 db typical isolation at 6 ghz. HMMC-2007 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. chip size: 660 x 960 m m (25.9 x 37.8 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 120 x 120 m m (4.7 x 4.7 mils) absolute maximum ratings [1] symbol parameters/conditions units min. max. v sel select voltages 1 and 2 v -10.5 +10.5 p in rf input power dbm 27 t op operating temperature c -55 +125 t stg storage temperature c -65 +165 t max maximum assembly temp. c +200 p unsel power into unselected output dbm 27 note: 1. operation in excess of any one of these conditions may result in permanent damage to this device. t a = 25 c except for t op , t stg , and t max .
2 dc specifications/physical properties, t a = 25 c symbol parameters and test conditions units min. typ. max. i sel -10 v leakage current @ -10 v m a 200 i sel +10 v leakage current @ +10 v m a20 pinch-off voltage (v sel2 = v p , v rfout2 = +2 v, v p i rfout2 = 4 ma, v sel1 = -10 v, v rfout1 = open circuit, v -6.75 -3.00 v rfin = gnd bv gss breakdown voltage (test fet w/v d = v s = gnd, i g = -50 m a) v -13.0 rf specifications, t a = 25 c, z o = 50 w , v sel-high = +10 v, v sel-low = -10 v symbol parameters and test conditions units min. typ. max. bw guaranteed operating bandwidth ghz dc 8.0 il insertion loss, rf in to selected rf out , f = 6 ghz, off throw db 1.1 1.4 iso isolation, rf in to unselected rf out , f = 6 ghz, off throw db 38 rl in input return loss @ 6 ghz db 25 rl out-on output return loss, on throw @ 6 ghz db 25 rl out-off output return loss, off throw @ 6 ghz db 18 p 1 db input power where il increases by 1 db f in = 2 ghz dbm 27 t s switching speed, 10% C 90% rf envelope f in = 2 ghz m s20
3 applications the HMMC-2007 can be used in instrumentation, communica- tions, radar, ecm, ew, and many other systems requiring spdt switching. it can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on. assembly techniques die attach should be done with conductive epoxy. gold thermosonic bonding is recom- mended for all bonds. the top and bottom metallization is gold. for more detailed information see agilent application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. s-parameters [1] , t a =25 c, z o = 50 w , v sel high = 0 v, v sel low = -10 v freq. s 11 s 21 s 31 s 22 s 33 ghz (insertion loss) (isolation) (on throw) (off throw) db mag. ang. db mag. ang. db db mag. ang. db mag. ang. 0.5 -26.41 0.048 -57.11 -1.08 0.88 -49.06 -67.74 -28.40 0.03 -47.94 -32.26 0.024 47.18 1.0 -27.53 0.042 -113.83 -1.13 0.88 -93.69 -60.55 -24.74 0.05 -117.54 -30.79 0.029 -38.11 1.5 -30.69 0.029 -176.73 -1.18 0.87 -138.08 -56.17 -31.91 0.02 168.76 -30.35 0.030 -64.68 2.0 -32.37 0.024 115.57 -1.21 0.87 177.39 -53.18 -31.31 0.02 119.22 -26.21 0.049 -134.70 2.5 -31.79 0.026 61.35 -1.25 0.87 133.00 -50.38 -28.90 0.03 68.41 -26.38 0.048 151.66 3.0 -30.60 0.030 4.27 -1.30 0.86 88.53 -47.63 -32.95 0.02 -11.68 -25.66 0.052 103.24 3.5 -28.53 0.037 -58.32 -1.33 0.86 44.08 -45.67 -29.26 0.03 -44.21 -22.99 0.071 38.61 4.0 -27.14 0.044 -124.01 -1.34 0.86 -0.53 -44.12 -30.61 0.02 -113.40 -22.41 0.076 -21.25 4.5 -26.46 0.048 172.69 -1.37 0.85 -45.16 -42.68 -32.21 0.02 165.53 -21.68 0.082 -75.25 5.0 -27.03 0.045 107.19 -1.40 0.85 -89.79 -41.45 -36.49 0.01 141.98 -19.88 0.101 -133.81 5.5 -28.64 0.037 32.44 -1.42 0.85 -134.56 -40.28 -34.51 0.01 4.26 -19.89 0.101 167.02 6.0 -29.55 0.033 -59.18 -1.45 0.85 -179.46 -39.16 -32.44 0.02 -100.27 -19.03 0.112 115.49 6.5 -26.88 0.045 -156.32 -1.51 0.84 135.54 -38.12 -27.18 0.04 176.54 -18.28 0.122 56.80 7.0 -23.24 0.069 130.95 -1.56 0.84 90.76 -37.13 -23.83 0.06 122.00 -18.67 0.117 -2.63 7.5 -21.53 0.084 70.91 -1.52 0.84 46.04 -36.36 -21.48 0.08 51.31 -18.61 0.117 -60.32 8.0 -21.21 0.087 15.06 -1.62 0.83 0.47 -35.64 -21.73 0.08 -15.06 -17.65 0.131 -124.25 8.5 -20.92 0.090 -41.26 -1.64 0.83 -44.44 -34.83 -22.22 0.07 -81.88 -16.95 0.142 172.46 9.0 -19.88 0.101 -104.30 -1.66 0.83 -90.23 -34.13 -20.42 0.09 -145.01 -16.07 0.157 115.03 9.5 -18.65 0.117 -175.05 -1.84 0.81 -135.81 -33.62 -18.17 0.12 145.14 -14.94 0.179 59.82 10.0 -17.04 0.141 116.96 -1.90 0.80 179.24 -34.14 -16.31 0.15 85.15 -14.31 0.193 3.39 note: 1. three-port-wafer-probed data: port 1 = rf input, port 2 = selected rf output (i.e., on throw), and port 3 = unselected rf output (i.e., off throw).
4 rf1 rf2 rf common sel1 sel2 figure 1. HMMC-2007 schematic. recommended operating conditions, t a =25 c select line rf path rf in to rf in to sel1 sel2 rf out2 rf out1 +10 v -10 v isolated low loss -10 v +10 v low loss isolated
5 HMMC-2007 typical performance note: 1. data taken with the device mounted in modular breadboard package. 0510 frequency (ghz) figure 2. insertion loss [1] vs. frequency. -5.0 -3.0 -4.0 -2.0 -1.0 0 0510 -100 -60 -80 -40 -20 0 insertion loss (db) figure 5. output return loss [1] vs. frequency. frequency (ghz) figure 3. input-to-output isolation [1] vs. frequency. isolation (db) figure 4. input return loss [1] vs. frequency. 0510 -50 -30 -40 -20 -10 0 frequency (ghz) input return loss (db) s 21-on , s 31-on s 21-off , s 31-off s 11 0510 -50 -30 -40 -20 -10 0 frequency (ghz) output return loss (db) figure 6. gain compression vs. power input. 10 20 30 25 15 -5 -3 -4 -2 -1 0 power input (dbm) gain compression (db) s 33 s 22 1 ghz 10 mhz
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent sales representative. note: all compression data measured in an individual device mounted in an hp83040 series modular microcircuit package @ t case = 25 c. figure 6. HMMC-2007 bonding pad locations. (dimensions in micrometers) 97 97 480 863 0 97 0 563 960 660 97 863 www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-5451e (11/99)
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